Growth and characteristics of GaInN/GaInN multiple quantum well light-emitting diodes

Effect of chip geometry on breakdown voltage of GaInN light-emitting diodes

Reverse leakage current characteristics of GaInN/GaN multiple quantum well light-emitting diodes (LEDs) with various chip geometries are examined. The effect of chip geometry on the reverse leakage current is negligible at a low voltage, but becomes apparent at a high voltage. The reverse breakdown voltage of LEDs decreases as the angle of vertex in the chip geometry decreases presumably becaus...

Analysis of reverse tunnelling current in GaInN light-emitting diodes

The characteristics of the reverse leakage current of GaInN/GaN multiple quantum well light-emitting diodes (LEDs) are examined with various n-type GaN doping concentrations and interpreted by using a tunnelling current model. Changing the doping concentration of the n-type GaN influences the tunnelling probability of electrons into the conduction band and thus the reverse leakage current. Redu...

Photon modulated electroluminescence of GaInN/GaN multiple quantum well light emitting diodes

Discrete Steps in the Capacitance-Voltage Characteristics of GaInN/GaN Light Emitting Diode Structures

A detailed modeling of the electronic bandstructure of GaInN alloys and GaInN/GaN heterostructures typically used for high efficiency light emitting diodes is of high relevance for future improvements. Here we are exploring opportunities to accurately quantify the carrier dynamics under forward and reverse voltage bias. In GaInN/GaN LED-type heterostructures we observe distinct steps in the jun...

Bluish-green semipolar GaInN/GaN light emitting diodes on {11̄01} GaN side facets

Bluish-green semipolar GaInN/GaN light emitting diodes were realized on the {11̄01} side facets of selectively grown GaN stripes with an on-wafer optical output power of 240μW@20mA for about 500 nm emission wavelength. Structural investigations using TEM, SEM, HRXRD and AFM could be related to the luminescence properties in PL and CL. The defect-related luminescence peaks at 3.3 eV and 3.41 eV, ...